ZXMN10A11GTC

ZXMN10A11GTC - Diodes Incorporated

Part Number
ZXMN10A11GTC
Manufacturer
Diodes Incorporated
Brief Description
MOSFET N-CH 100V 1.7A SOT223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
ZXMN10A11GTC PDF online browsing
Datasheet PDF Download
ZXMN10A11GTC.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3930 pcs
Reference Price
USD 0/pcs
Our Price
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ZXMN10A11GTC Detailed Description

Part Number ZXMN10A11GTC
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 274pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Rds On (Max) @ Id, Vgs 350 mOhm @ 2.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Weight -
Country of Origin -

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