ZXMHC3A01N8TC - Diodes Incorporated

Part Number	ZXMHC3A01N8TC
Part Status	Active
FET Type	2 N and 2 P-Channel (H-Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.17A, 1.64A
Rds On (Max) @ Id, Vgs	125 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 25V
Power - Max	870mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
ZXMHC10A07N8	DIODES	100V SO8 Complementary enhancement mode MOSFET H-Bridge	Details
ZXMHC10A07N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 100V 8-SOIC	Details
ZXMHC10A07T8TA	Diodes Incorporated	MOSFET 2N/2P-CH 100V 1A/0.8A SM8	Details
ZXMHC3A01N8	DIODES	30V SO8 Complementary enhancement mode MOSFET H-Bridge	Details
ZXMHC3A01N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 30V 8-SOIC	Details
ZXMHC3A01T8TA	Diodes Incorporated	MOSFET 2N/2P-CH 30V 2.7A/2A SM8	Details
ZXMHC3F381N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 30V 8-SOIC	Details
ZXMHC6A07N8	DIODES	60V SO8 Complementary enhancement mode MOSFET H-Bridge	Details
ZXMHC6A07N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 60V 8-SOIC	Details
ZXMHC6A07T8TA	Diodes Incorporated	MOSFET 2N/2P-CH 60V SM8	Details