| Número de pieza | ZXMHC3A01N8TC |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N and 2 P-Channel (H-Bridge) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 2.17A, 1.64A |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.5A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 3.9nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 190pF @ 25V |
| Potencia - Max | 870mW |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.154", 3.90mm Width) |
| Paquete de dispositivo del proveedor | 8-SOP |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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ZXMHC10A07N8 | DIODES | 100V SO8 Complementary enhancement mode MOSFET H-Bridge | Detalles |
|
ZXMHC10A07N8TC | Diodes Incorporated | MOSFET 2N/2P-CH 100V 8-SOIC | Detalles |
 |
ZXMHC10A07T8TA | Diodes Incorporated | MOSFET 2N/2P-CH 100V 1A/0.8A SM8 | Detalles |
|
ZXMHC3A01N8 | DIODES | 30V SO8 Complementary enhancement mode MOSFET H-Bridge | Detalles |
|
ZXMHC3A01N8TC | Diodes Incorporated | MOSFET 2N/2P-CH 30V 8-SOIC | Detalles |
|
ZXMHC3A01T8TA | Diodes Incorporated | MOSFET 2N/2P-CH 30V 2.7A/2A SM8 | Detalles |
|
ZXMHC3F381N8TC | Diodes Incorporated | MOSFET 2N/2P-CH 30V 8-SOIC | Detalles |
|
ZXMHC6A07N8 | DIODES | 60V SO8 Complementary enhancement mode MOSFET H-Bridge | Detalles |
|
ZXMHC6A07N8TC | Diodes Incorporated | MOSFET 2N/2P-CH 60V 8-SOIC | Detalles |
|
ZXMHC6A07T8TA | Diodes Incorporated | MOSFET 2N/2P-CH 60V SM8 | Detalles |
