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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single › DNLS412E-13
DNLS412E-13

DNLS412E-13 - Diodes Incorporated

Part Number
DNLS412E-13
Manufacturer
Diodes Incorporated
Brief Description
TRANS NPN 12V 4A SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DNLS412E-13 PDF online browsing
Datasheet PDF Download
DNLS412E-13.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4180 pcs
Reference Price
USD 0/pcs
Our Price
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DNLS412E-13 Detailed Description

Part Number DNLS412E-13
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 12V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 4A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 3A, 2V
Power - Max 1W
Frequency - Transition 150MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223
Weight -
Country of Origin -

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