DMN65D8LFB-7B - Diodes Incorporated

Part Number	DMN65D8LFB-7B
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	260mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	5V, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	430mW (Ta)
Rds On (Max) @ Id, Vgs	3 Ohm @ 115mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X1-DFN1006-3
Package / Case	3-UFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN65D8L-7	Diodes Incorporated	MOSFET N-CH 60V 310MA SOT23	Details
DMN65D8LDW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363	Details
DMN65D8LDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 180MA SOT363	Details
DMN65D8LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 180MA SOT363	Details
DMN65D8LFB-7	Diodes Incorporated	MOSFET N-CH 60V 260MA 3DFN	Details
DMN65D8LFB-7B	Diodes Incorporated	MOSFET N-CH 60V 260MA 3DFN	Details
DMN65D8LQ-13	Diodes Incorporated	MOSFET N-CH 60V SOT23	Details
DMN65D8LQ-7	Diodes Incorporated	MOSFET N-CH 60V SOT23	Details
DMN65D8LW-7	Diodes Incorporated	MOSFET N-CH 60V 0.3A SOT323	Details