DMN5L06WKQ-7 - Diodes Incorporated

Part Number	DMN5L06WKQ-7
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	250mW (Ta)
Rds On (Max) @ Id, Vgs	2 Ohm @ 50mA, 5V
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-323
Package / Case	SC-70, SOT-323
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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DMN5040LSS-13	Diodes Incorporated	MOSFET BVDSS 41V-60V SO-8 TR 2	Details
DMN53D0L-13	Diodes Incorporated	MOSFET N-CH 50V 0.5A SOT23	Details
DMN53D0L-7	Diodes Incorporated	MOSFET N-CH 50V 0.5A SOT23	Details
DMN53D0LDW-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363	Details
DMN53D0LDW-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363	Details
DMN53D0LQ-13	Diodes Incorporated	MOSFET NCH 50V 500MA SOT23	Details
DMN53D0LQ-7	Diodes Incorporated	MOSFET N-CH 50V 0.5A SOT23	Details
DMN53D0LW-13	Diodes Incorporated	MOSFET N-CH 50V SOT323	Details