DMN2009LSS-13

DMN2009LSS-13 - Diodes Incorporated

Part Number
DMN2009LSS-13
Manufacturer
Diodes Incorporated
Brief Description
MOSFET N-CH 20V 12A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMN2009LSS-13 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
137500 pcs
Reference Price
USD 0.3002/pcs
Our Price
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DMN2009LSS-13 Detailed Description

Part Number DMN2009LSS-13
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2555pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Rds On (Max) @ Id, Vgs 8 mOhm @ 12A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
Weight -
Country of Origin -

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