DMN2009LSS-13 - Diodes Incorporated

Part Number	DMN2009LSS-13
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 10V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	58.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2555pF @ 10V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Rds On (Max) @ Id, Vgs	8 mOhm @ 12A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

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