DMJ70H900HJ3

DMJ70H900HJ3 - Diodes Incorporated

Part Number
DMJ70H900HJ3
Manufacturer
Diodes Incorporated
Brief Description
MOSFET BVDSS: 651V 800V TO251
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMJ70H900HJ3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
16714 pcs
Reference Price
USD 1.5135/pcs
Our Price
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DMJ70H900HJ3 Detailed Description

Part Number DMJ70H900HJ3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 603pF @ 50V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Rds On (Max) @ Id, Vgs 900 mOhm @ 1.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3, IPak, Short Leads
Weight -
Country of Origin -

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