DMG3415UFY4Q-7 - Diodes Incorporated

Part Number	DMG3415UFY4Q-7
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	282pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	650mW (Ta)
Rds On (Max) @ Id, Vgs	39 mOhm @ 4A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN2015-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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DMG3404L-13	Diodes Incorporated	MOSFET N-CH 30V 4.2A SOT23	Details
DMG3404L-7	Diodes Incorporated	MOSFET N-CH 30V 4.2A SOT23	Details
DMG3406L-13	Diodes Incorporated	MOSFET N-CH 30V 3.6A SOT23	Details
DMG3406L-7	Diodes Incorporated	MOSFET N-CH 30V 3.6A SOT23	Details
DMG3407SSN-7	Diodes Incorporated	MOSFET P-CH 30V 4A SC59	Details
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