CXDM6053N TR - Central Semiconductor Corp

Part Number	CXDM6053N TR
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	920pF @ 30V
Vgs (Max)	20V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Rds On (Max) @ Id, Vgs	41 mOhm @ 5.3A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-89
Package / Case	TO-243AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CXDM1002N TR	Central Semiconductor Corp	MOSFET N-CH 100V 2A SOT-89	Details
CXDM3069N TR	Central Semiconductor Corp	MOSFET N-CH 30V 6.9A SOT-89	Details
CXDM4060N TR	Central Semiconductor Corp	MOSFET N-CH 40V 6A SOT-89	Details
CXDM4060P TR	Central Semiconductor Corp	MOSFET P-CH 40V 6A SOT-89	Details
CXDM6053N TR	Central Semiconductor Corp	MOSFET N-CH 60V 5.3A SOT-89	Details