CDM22011-600LRFP SL - Central Semiconductor Corp

Part Number	CDM22011-600LRFP SL
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23.05nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	763pF @ 100V
Vgs (Max)	30V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Rds On (Max) @ Id, Vgs	360 mOhm @ 5.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FP
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CDM22010-650 SL	Central Semiconductor Corp	MOSFET N-CH 10A 650V TO220	Details
CDM22011-600LRFP SL	Central Semiconductor Corp	MOSFET N-CH 11A 600V TO-220FP	Details
CDM22012-800LRFP SL	Central Semiconductor Corp	MOSFET N-CH 800V 12A	Details