TN2510N8-G

TN2510N8-G - Microchip Technology

Part Number
TN2510N8-G
Manufacturer
Microchip Technology
Brief Description
MOSFET N-CH 100V 730MA SOT89-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TN2510N8-G PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
34213 pcs
Reference Price
USD 0.7828/pcs
Our Price
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TN2510N8-G Detailed Description

Part Number TN2510N8-G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 730mA (Tj)
Drive Voltage (Max Rds On,Min Rds On) 3V, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 125pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 750mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-243AA (SOT-89)
Package / Case TO-243AA
Weight -
Country of Origin -

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