TN2510N8-G - Microchip Technology

Part Number	TN2510N8-G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	730mA (Tj)
Drive Voltage (Max Rds On,Min Rds On)	3V, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	125pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 750mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-243AA (SOT-89)
Package / Case	TO-243AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TN2501N8-G	Microchip Technology	MOSFET N-CH 18V 400MA SOT89-3	Details
TN2504N8	SUPERTEX	TN2504N8 SUPERTEX SOT89 New Original Stocks	Details
TN2504N8-G	Microchip Technology	MOSFET N-CH 40V 0.89A SOT89-3	Details
TN2510N8-G	Microchip Technology	MOSFET N-CH 100V 730MA SOT89-3	Details
TN2524N8	Supertexinc	TN2524N8 Supertexinc SOT89 New Original Stocks	Details
TN2524N8-G	Microchip Technology	MOSFET N-CH 240V 360MA SOT89-3	Details
TN2535	SUPERTEX	TN2535 SUPERTEX SOP-16 New Original Stocks	Details
TN2540-600G	STMicroelectronics	SCR 25A 40MA 600V D2PAK	Details
TN2540-600G-TR	STMicroelectronics	SCR 25A 40MA 600V D2PAK	Details
TN2540-800G-TR	STMicroelectronics	IC SCR 25A 800V D2PAK	Details