AOH3106 - Alpha & Omega Semiconductor Inc.

Part Number	AOH3106
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	185pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta)
Rds On (Max) @ Id, Vgs	360 mOhm @ 2A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
AOH3106	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 2A SOT223	Details
AOH3110	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 1A SOT223	Details
AOH3254	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 5A SOT223-4	Details