영상 |
부품 번호 |
제조사 | 기술 |
전망 |
 |
VB10150C |
VISHAY | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A |
세부 |
 |
VB10150C-E3/4W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 150V TO263 |
세부 |
 |
VB10150C-E3/8W |
Vishay Semiconductor Diodes Division | DIODE ARRAY SCHOTTKY 150V TO263 |
세부 |
 |
VB10150C-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 10A 150V TO-263AB |
세부 |
 |
VB10150C-M3/8W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 10A 150V TO-263AB |
세부 |
 |
VB10150S |
VISHAY | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A |
세부 |
 |
VB10150S-E3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 150V 10A TO263AB |
세부 |
 |
VB10150S-E3/8W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 150V 10A TO263AB |
세부 |
 |
VB10150S-M3/4W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 10A 150V TO-263AB |
세부 |
 |
VB10150S-M3/8W |
Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 10A 150V TO-263AB |
세부 |