| Immagine | Numero di parte | Produttori | Descrizione | vista |
|---|---|---|---|---|
 |
S1J-KR3G | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | Dettagli |
|
S1M-KR3G | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | Dettagli |
|
S1M-KR2G | Taiwan Semiconductor Corporation | STANDARD RECOVERY RECTIFIER | Dettagli |
 |
BAT54AWF | Nexperia USA Inc. | DIODE SCHOTTKY 30V 200MA SC70 | Dettagli |
|
BAT54CWF | Nexperia USA Inc. | DIODE SCHOTTKY 30V 200MA SC70 | Dettagli |
 |
1N4003GR0 | Taiwan Semiconductor Corporation | 1A200VSTD.GLASS PASSIVATED REC | Dettagli |
|
1N4004GR0 | Taiwan Semiconductor Corporation | 1A400VSTD.GLASS PASSIVATED REC | Dettagli |
 |
BAS40-06WF | Nexperia USA Inc. | DIODE SCHOTTKY 40V 120MA SC70 | Dettagli |
|
S1GLR2G | Taiwan Semiconductor Corporation | 1A 400V GLASS PASSIVATED SMF R | Dettagli |
|
S1GR3 | Taiwan Semiconductor Corporation | 1A 400V GLASS PASSIVATED SMD R | Dettagli |
|
S1JR3 | Taiwan Semiconductor Corporation | 1A 600V GLASS PASSIVATED SMD R | Dettagli |
|
S1JR2 | Taiwan Semiconductor Corporation | 1A 600V GLASS PASSIVATED SMD R | Dettagli |
|
S1GR2 | Taiwan Semiconductor Corporation | 1A 400V GLASS PASSIVATED SMD R | Dettagli |
 |
MMSD4148-D87Z | ON Semiconductor | DIODE GEN PURP 100V 200MA SOD123 | Dettagli |
 |
BAS516,H3F | Toshiba Semiconductor and Storage | DIODE GEN PURP 100V 250MA ESC | Dettagli |
|
BAS316,H3F | Toshiba Semiconductor and Storage | DIODE GEN PURP 100V 250MA USC | Dettagli |
|
1N4003GA0 | Taiwan Semiconductor Corporation | 1A200VSTD.GLASS PASSIVATED REC | Dettagli |
|
BAT54SWF | Nexperia USA Inc. | DIODE SCHOTTKY 30V 200MA SC70 | Dettagli |
|
1N4004GA0 | Taiwan Semiconductor Corporation | 1A400VSTD.GLASS PASSIVATED REC | Dettagli |
|
BAS516,L3F | Toshiba Semiconductor and Storage | DIODE GEN PURP 100V 250MA ESC | Dettagli |
