| Image | Numéro d'article | Les fabricants | La description | Vue |
|---|---|---|---|---|
 |
S8CGHM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 8A DO214AB | Détails |
|
S8CJHM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DO214AB | Détails |
|
S10CMHM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 10A DO214AB | Détails |
,%20SC-63.jpg "VS-6EVL06HM3/I") |
VS-6EVL06HM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURPOSE 600V SLIMDPAK | Détails |
 |
RFN5BM6SFHTL | Rohm Semiconductor | SUPER FAST RECOVERY DIODE CORRE | Détails |
|
RF305BM6SFHTL | Rohm Semiconductor | SUPER FAST RECOVERY DIODE AEC-Q | Détails |
 |
1N4006GR0 | Taiwan Semiconductor Corporation | 1A800VSTD.GLASS PASSIVATED REC | Détails |
|
RFNL5BM6SFHTL | Rohm Semiconductor | SUPER FAST RECOVERY DIODE AEC-Q | Détails |
|
SE100PWJHM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 10A SLIMDPAK | Détails |
|
SE100PWGHM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 10A SLIMDPAK | Détails |
|
S8CKHM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 8A DO214AB | Détails |
|
1N4006GA0 | Taiwan Semiconductor Corporation | 1A800VSTD.GLASS PASSIVATED REC | Détails |
 |
FFD08S60S-F085 | ON Semiconductor | DIODE GEN PURP 600V 8A DPAK | Détails |
|
S8CK-M3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 8A DO214AB | Détails |
|
RFN3BM6SFHTL | Rohm Semiconductor | SUPER FAST RECOVERY DIODE CORRE | Détails |
|
S10CGHM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 10A DO214AB | Détails |
|
S10CJHM3/I | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 10A DO214AB | Détails |
|
RFN5BM2SFHTL | Rohm Semiconductor | SUPER FAST RECOVERY DIODE CORRE | Détails |
 |
SK520C R7G | Taiwan Semiconductor Corporation | DIODE SCHOTTKY 200V 5A DO214AB | Détails |
|
SSL34 R7G | Taiwan Semiconductor Corporation | DIODE SCHOTTKY 40V 3A DO214AB | Détails |
