| Número de pieza | SI4122DY-T1-GE3 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | N-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 40V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 27.2A (Tc) |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 95nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 4200pF @ 20V |
| Vgs (Max) | ±25V |
| Característica FET | - |
| Disipación de potencia (Máx) | 3W (Ta), 6W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 15A, 10V |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | 8-SO |
| Paquete / caja | 8-SOIC (0.154", 3.90mm Width) |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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