| Número de pieza | RN1111ACT(TPL3) |
|---|---|
| Estado de la pieza | Active |
| Tipo de transistor | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 80mA |
| Voltaje: ruptura del emisor del colector (máximo) | 50V |
| Resistencia - Base (R1) (Ohmios) | 10k |
| Resistencia - Base del emisor (R2) (ohmios) | - |
| Ganancia de corriente CC (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Saturación de Vce (Máx) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Corriente - corte de colector (máximo) | 100nA (ICBO) |
| Frecuencia - Transición | - |
| Potencia - Max | 100mW |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SC-101, SOT-883 |
| Paquete de dispositivo del proveedor | CST3 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
RN1110(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | Detalles |
|
RN1110,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | Detalles |
|
RN1110ACT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W CST3 | Detalles |
|
RN1110CT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.05W CST3 | Detalles |
 |
RN1110MFV | ORIGINAL | RN1110MFV ORIGINAL NEW New Original Stocks | Detalles |
 |
RN1110MFV,L3F | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.15W VESM | Detalles |
|
RN1111 | TOSHIBA | RN1111 TOSHIBA SOT323 New Original Stocks | Detalles |
|
RN1111,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | Detalles |
|
RN1111ACT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W CST3 | Detalles |
|
RN1111CT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.05W CST3 | Detalles |
