,-TO-263AB.jpg "SFS1004GHMNG photos")
| Número de pieza | SFS1004GHMNG |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 200V |
| Corriente - promedio rectificado (Io) | 10A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 975mV @ 5A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 1µA @ 200V |
| Capacitancia @ Vr, F | 70pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Paquete de dispositivo del proveedor | TO-263AB (D²PAK) |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
SFS1001G MNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 10A TO263AB | Detalles |
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SFS1001GHMNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 10A TO263AB | Detalles |
|
SFS1002G MNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 10A TO263AB | Detalles |
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SFS1002GHMNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 10A TO263AB | Detalles |
|
SFS1003G MNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 10A TO263AB | Detalles |
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SFS1003GHMNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 10A TO263AB | Detalles |
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SFS1004G MNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 10A TO263AB | Detalles |
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SFS1004GHMNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 10A TO263AB | Detalles |
|
SFS1005G MNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 10A TO263AB | Detalles |
|
SFS1005GHMNG | Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 10A TO263AB | Detalles |
