S1G-JR2 - Taiwan Semiconductor Corporation

Número de pieza	S1G-JR2
Estado de la pieza	Last Time Buy
Tipo de diodo	Standard
Voltaje - DC Reverse (Vr) (Max)	400V
Corriente - promedio rectificado (Io)	1A
Voltaje - Adelante (Vf) (Máx) @ Si	1.1V @ 1A
Velocidad	Standard Recovery >500ns, > 200mA (Io)
Tiempo de recuperación inversa (trr)	1.5µs
Current - Reverse Leakage @ Vr	1µA @ 400V
Capacitancia @ Vr, F	12pF @ 4V, 1MHz
Tipo de montaje	Surface Mount
Paquete / caja	DO-214AC, SMA
Paquete de dispositivo del proveedor	DO-214AC (SMA)
Temperatura de funcionamiento - unión	-55°C ~ 175°C
Peso	-
País de origen	-

Número de pieza	Fabricantes	Descripción	Ver
S1G	Fairchild/ON Semiconductor	DIODE GEN PURP 400V 1A SMA	Detalles
S1G M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Detalles
S1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Detalles
S1G-13	Diodes Incorporated	DIODE GEN PURP 400V 1A SMA	Detalles
S1G-13-F	Diodes Incorporated	DIODE GEN PURP 400V 1A SMA	Detalles
S1G-6904LF/11T	VISHAY	S1G-6904LF/11T VISHAY SMD or Through Hole New Original Stocks	Detalles
S1G-E3	vishay	S1G-E3 vishay DO214 New Original Stocks	Detalles
S1G-E3/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Detalles
S1G-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Detalles
S1G-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO214AC	Detalles