| Número de pieza | MBR260HWTR |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 60V |
| Corriente - promedio rectificado (Io) | 2A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 660mV @ 2A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 50µA @ 60V |
| Capacitancia @ Vr, F | 100pF @ 5V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SOD-123 |
| Paquete de dispositivo del proveedor | SOD-123 |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
MBR200100 | MCC | 200 Amp Rectifier 20 to 100 Volts Schottky Barrier | Detalles |
 |
MBR200100CT | GeneSiC Semiconductor | DIODE MODULE 100V 200A 2TOWER | Detalles |
|
MBR200100CTR | GeneSiC Semiconductor | DIODE MODULE 100V 200A 2TOWER | Detalles |
 |
MBR200100CTS | GeneSiC Semiconductor | DIODE MODULE 100V 200A SOT227 | Detalles |
|
MBR200150CT | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 100A 2 TOWER | Detalles |
|
MBR200150CTR | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 100A 2 TOWER | Detalles |
|
MBR20020 | MCC | 200 Amp Rectifier 20 to 100 Volts Schottky Barrier | Detalles |
|
MBR200200CT | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 100A 2 TOWER | Detalles |
|
MBR200200CTR | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 100A 2 TOWER | Detalles |
|
MBR20020CT | GeneSiC Semiconductor | DIODE MODULE 20V 200A 2TOWER | Detalles |
