| Número de pieza | GBU806TB |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Single Phase |
| Tecnología | Standard |
| Voltaje - Pico Inverso (Máx) | 600V |
| Corriente - promedio rectificado (Io) | 8A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 8A |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 4-ESIP |
| Paquete de dispositivo del proveedor | GBU |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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GBU10005 | Diodes Incorporated | RECT BRIDGE GPP 10A 50V GBU | Detalles |
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GBU10005-G | Comchip Technology | RECT BRIDGE GPP 50V 10A GBU | Detalles |
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GBU10005-GBU1010 | DIODES | 10A GLASS PASSIVATED BRIDGE RECTIFIER | Detalles |
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GBU10005TB | SMC Diode Solutions | BRIDGE RECT 1PHASE 50V 10A GBU | Detalles |
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GBU10005_1 | DIODES | 10A GLASS PASSIVATED BRIDGE RECTIFIER | Detalles |
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GBU1001 | Diodes Incorporated | RECT BRIDGE GPP 10A 100V GBU | Detalles |
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GBU1001 D2G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 10A GBU | Detalles |
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GBU10010 | DIODES | 10A GLASS PASSIVATED BRIDGE RECTIFIER | Detalles |
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GBU1001HD2G | Taiwan Semiconductor Corporation | BRIDGE RECT 1PHASE 50V 10A GBU | Detalles |
|
GBU1001TB | SMC Diode Solutions | BRIDGE RECT 1PHASE 100V 10A GBU | Detalles |
