| Número de pieza | 1N5622C.TR |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Avalanche |
| Voltaje - DC Reverse (Vr) (Max) | 1000V |
| Corriente - promedio rectificado (Io) | 2A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 1A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 2µs |
| Current - Reverse Leakage @ Vr | 500nA @ 1000V |
| Capacitancia @ Vr, F | 23pF @ 5V, 1MHz |
| Tipo de montaje | Through Hole |
| Paquete / caja | Axial |
| Paquete de dispositivo del proveedor | Axial |
| Temperatura de funcionamiento - unión | -65°C ~ 175°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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1N5614GPHE3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AC | Detalles |
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1N5614US | Microsemi Corporation | DIODE GEN PURP 200V 1A D5A | Detalles |
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1N5615 | Microsemi Corporation | DIODE GEN PURP 200V 1A AXIAL | Detalles |
