| Número de pieza | HS8K11TB |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Dual) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 7A, 11A |
| Rds On (Max) @ Id, Vgs | 17.9 mOhm @ 7A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA |
| Carga de puerta (Qg) (Max) @ Vgs | 11.1nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 500pF @ 15V |
| Potencia - Max | 2W |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-UDFN Exposed Pad |
| Paquete de dispositivo del proveedor | HSML3030L10 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
.jpg "HS8.1") |
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