| Número de pieza | MMSD103T1G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 250V |
| Corriente - promedio rectificado (Io) | 200mA (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.25V @ 200mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 1µA @ 200V |
| Capacitancia @ Vr, F | 5pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SOD-123 |
| Paquete de dispositivo del proveedor | SOD-123 |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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MMSD-06-22-L-07.87-S-K-M | SAMTECH | MMSD-06-22-L-07.87-S-K-M SAMTECH SOT23 New Original Stocks | Detalles |
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MMSD103T1 | ON Semiconductor | DIODE GEN PURP 250V 200MA SOD123 | Detalles |
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MMSD103T1G | ON Semiconductor | DIODE GEN PURP 250V 200MA SOD123 | Detalles |
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MMSD16128808S-V-CB | EXSHINE | MEMORY MODULE SDRAM 128Mx16-SOP | Detalles |
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MMSD16128808S-V-CN | EXSHINE | MEMORY MODULE SDRAM 128Mx16-SOP | Detalles |
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MMSD16128808S-V-CS | EXSHINE | MEMORY MODULE SDRAM 128Mx16-SOP | Detalles |
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MMSD16128808S-V-IB | EXSHINE | MEMORY MODULE SDRAM 128Mx16-SOP | Detalles |
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MMSD16128808S-V-IN | EXSHINE | MEMORY MODULE SDRAM 128Mx16-SOP | Detalles |
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MMSD16128808S-V-IS | EXSHINE | MEMORY MODULE SDRAM 128Mx16-SOP | Detalles |
