| Número de pieza | BAV170/ZLR |
|---|---|
| Estado de la pieza | Obsolete |
| Configuración de Diodo | 1 Pair Common Cathode |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 75V |
| Corriente - Rectificado promedio (Io) (por diodo) | 215mA (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.25V @ 150mA |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 3µs |
| Current - Reverse Leakage @ Vr | 5nA @ 75V |
| Temperatura de funcionamiento - unión | 150°C (Max) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-236-3, SC-59, SOT-23-3 |
| Paquete de dispositivo del proveedor | TO-236AB (SOT23) |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
BAV10 | SYNSEMI | HIGH SPEED SWITCHING DIODE | Detalles |
|
BAV100 | VISHAY | Silicon Epitaxial Planar Diodes | Detalles |
 |
BAV100-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | Detalles |
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BAV100-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | Detalles |
|
BAV100_07 | SEMIKRON | Ultrafast silicon rectifier diodes | Detalles |
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BAV101 | PHIL | BAV101 PHIL SOP New Original Stocks | Detalles |
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BAV101 L0G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | Detalles |
|
BAV101 L1G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | Detalles |
|
BAV101-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | Detalles |
|
BAV101-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | Detalles |
