.jpg "BAS521,315 photos")
| Número de pieza | BAS521,315 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 300V |
| Corriente - promedio rectificado (Io) | 250mA (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 100mA |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 150nA @ 250V |
| Capacitancia @ Vr, F | 5pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | SC-79, SOD-523 |
| Paquete de dispositivo del proveedor | SOD-523 |
| Temperatura de funcionamiento - unión | 150°C (Max) |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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BAS516 | NXP | BAS516 NXP SOD-52.. New Original Stocks | Detalles |
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BAS516,115 | Nexperia USA Inc. | DIODE GEN PURP 100V 250MA SOD523 | Detalles |
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BAS516,135 | Nexperia USA Inc. | DIODE GEN PURP 100V 250MA SOD523 | Detalles |
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BAS516,315 | Nexperia USA Inc. | DIODE GEN PURP 100V 250MA SOD523 | Detalles |
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BAS516,H3F | Toshiba Semiconductor and Storage | DIODE GEN PURP 100V 250MA ESC | Detalles |
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BAS516,L3F | Toshiba Semiconductor and Storage | DIODE GEN PURP 100V 250MA ESC | Detalles |
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BAS516-TP | Micro Commercial Co | DIODE GEN PURP 75V 250MA SOD523 | Detalles |
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BAS516/B | NXP | BAS516/B NXP SOT-52.. New Original Stocks | Detalles |
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BAS516/DG | NXP | BAS516/DG NXP SOD-52.. New Original Stocks | Detalles |
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BAS52-02V | INFINEON | BAS52-02V INFINEON SOD523 New Original Stocks | Detalles |
