| Número de pieza | Si4112G-BT* |
|---|---|
| Package Type | SMD or Through Hole |
| Rohs Status | Lead free / RoHS Compliant |
| Description | DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS |
| MFG Part Code | Si4112G-BT* |
| Series | Si4112G |
| Delivery Time | 1 Day |
| Caracteristicas | - |
| voltaje | - |
| Date Code | New |
| Tipo de montaje | - |
| Temperatura de funcionamiento | - |
| Moisture Sensitivity Level (MSL) | 1 |
| Corriente | - |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
SI410 | VISHAY | SI410 VISHAY TSSOP New Original Stocks | Detalles |
|
SI4100DY | VISHAY | SI4100DY VISHAY SOP-8 New Original Stocks | Detalles |
 |
SI4100DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 6.8A 8-SOIC | Detalles |
|
SI4100DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 6.8A 8-SOIC | Detalles |
|
SI4101DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 25.7A 8SOIC | Detalles |
|
SI4102DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | Detalles |
|
SI4102DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 3.8A 8-SOIC | Detalles |
|
SI4103DY-T1-GE3 | Vishay Siliconix | MOSFET P-CHAN 30V SO-8 | Detalles |
|
SI4104DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | Detalles |
|
SI4104DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 4.6A 8-SOIC | Detalles |
