| Número de pieza | MBR20H100CTF-G1 |
|---|---|
| Estado de la pieza | Active |
| Configuración de Diodo | 1 Pair Common Cathode |
| Tipo de diodo | Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 100V |
| Corriente - Rectificado promedio (Io) (por diodo) | 10A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 770mV @ 10A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 4.5µA @ 100V |
| Temperatura de funcionamiento - unión | -65°C ~ 175°C |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-220-3 Full Pack |
| Paquete de dispositivo del proveedor | TO-220F-3 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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MBR200100 | MCC | 200 Amp Rectifier 20 to 100 Volts Schottky Barrier | Detalles |
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MBR200100CT | GeneSiC Semiconductor | DIODE MODULE 100V 200A 2TOWER | Detalles |
|
MBR200100CTR | GeneSiC Semiconductor | DIODE MODULE 100V 200A 2TOWER | Detalles |
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MBR200100CTS | GeneSiC Semiconductor | DIODE MODULE 100V 200A SOT227 | Detalles |
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MBR200150CT | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 100A 2 TOWER | Detalles |
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MBR200150CTR | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 100A 2 TOWER | Detalles |
|
MBR20020 | MCC | 200 Amp Rectifier 20 to 100 Volts Schottky Barrier | Detalles |
|
MBR200200CT | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 100A 2 TOWER | Detalles |
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MBR200200CTR | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 100A 2 TOWER | Detalles |
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MBR20020CT | GeneSiC Semiconductor | DIODE MODULE 20V 200A 2TOWER | Detalles |
