| Número de pieza | CDBJSC3650-G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Silicon Carbide Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 650V |
| Corriente - promedio rectificado (Io) | 3A (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.7V @ 3A |
| Velocidad | No Recovery Time > 500mA (Io) |
| Tiempo de recuperación inversa (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 650V |
| Capacitancia @ Vr, F | 190pF @ 0V, 1MHz |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-220-2 Full Pack |
| Paquete de dispositivo del proveedor | TO-220F |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
CDBJFSC101200-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
|
CDBJFSC10650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
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CDBJFSC3650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
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CDBJFSC5650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
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CDBJFSC8650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
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CDBJSC101200-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
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CDBJSC101700-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
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CDBJSC10650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
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CDBJSC3650-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
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CDBJSC51200-G | Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Detalles |
