| Número de pieza | 2N5109 |
|---|---|
| Estado de la pieza | Active |
| Tipo de transistor | NPN |
| Voltaje: ruptura del emisor del colector (máximo) | 20V |
| Frecuencia - Transición | 1.2GHz |
| Figura de ruido (dB Typ @ f) | 3dB @ 200MHz |
| Ganancia | - |
| Potencia - Max | 1W |
| Ganancia de corriente CC (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
| Current - Collector (Ic) (Max) | 400mA |
| Temperatura de funcionamiento | -65°C ~ 200°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-205AD, TO-39-3 Metal Can |
| Paquete de dispositivo del proveedor | TO-39 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
2N0303 | INFINEON | 2N0303 INFINEON TO-220 New Original Stocks | Detalles |
|
2N03L10 | INFINEON | 2N03L10 INFINEON TO-251 New Original Stocks | Detalles |
|
2N1008 | EXSHINE | alloy-junction germanium transistors | Detalles |
|
2N1008A | EXSHINE | alloy-junction germanium transistors | Detalles |
|
2N1008B | EXSHINE | alloy-junction germanium transistors | Detalles |
|
2N1011 | EXSHINE | germanium transistors | Detalles |
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2N1016B | Microsemi Corporation | NPN TRANSISTOR | Detalles |
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2N1016C | Microsemi Corporation | NPN TRANSISTOR | Detalles |
|
2N1016D | Microsemi Corporation | NPN TRANSISTOR | Detalles |
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2N1057 | EXSHINE | alloy-junction germanium transistors | Detalles |
