| Part Number | 2N5109 |
|---|---|
| Part Status | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | 3dB @ 200MHz |
| Gain | - |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 15V |
| Current - Collector (Ic) (Max) | 400mA |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
2N0303 | INFINEON | 2N0303 INFINEON TO-220 New Original Stocks | Details |
|
2N03L10 | INFINEON | 2N03L10 INFINEON TO-251 New Original Stocks | Details |
|
2N1008 | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1008A | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1008B | EXSHINE | alloy-junction germanium transistors | Details |
|
2N1011 | EXSHINE | germanium transistors | Details |
 |
2N1016B | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1016C | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1016D | Microsemi Corporation | NPN TRANSISTOR | Details |
|
2N1057 | EXSHINE | alloy-junction germanium transistors | Details |
