E3M0120090D Detailed Description
| Part Number |
E3M0120090D |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
900V |
| Current - Continuous Drain (Id) @ 25°C |
23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
15V |
| Rds On (Max) @ Id, Vgs |
155 mOhm @ 15A, 15V |
| Vgs(th) (Max) @ Id |
3.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs |
17.3nC @ 15V |
| Vgs (Max) |
+18V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 600V |
| FET Feature |
- |
| Power Dissipation (Max) |
97W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247-3 |
| Package / Case |
TO-247-3 |
| Weight |
- |
| Country of Origin |
- |
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