C2M0080170P - Cree/Wolfspeed

Part Number	C2M0080170P
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	125 mOhm @ 28A, 20V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 20V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 1000V
FET Feature	-
Power Dissipation (Max)	277W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
C2M0025120D	Cree/Wolfspeed	MOSFET N-CH 1200V 90A TO-247	Details
C2M0040120D	Cree/Wolfspeed	MOSFET N-CH 1200V 60A TO-247	Details
C2M0045170D	Cree/Wolfspeed	MOSFET NCH 1.7KV 72A TO247	Details
C2M0045170P	Cree/Wolfspeed	ZFET SIC DMOSFET 1700V VDS RDS	Details
C2M0080120D	Cree/Wolfspeed	MOSFET N-CH 1200V 31.6A TO247	Details
C2M0080170P	Cree/Wolfspeed	ZFET SIC DMOSFET 1700V VDS RDS	Details
C2M0160120D	Cree/Wolfspeed	MOSFET N-CH 1200V 19A TO-247	Details
C2M0280120D	Cree/Wolfspeed	MOSFET N-CH 1200V 10A TO-247-3	Details