VS-GT50TP120N - Vishay Semiconductor Diodes Division

Part Number	VS-GT50TP120N
Part Status	Active
IGBT Type	Trench
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	100A
Power - Max	405W
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 50A
Current - Collector Cutoff (Max)	5mA
Input Capacitance (Cies) @ Vce	6.24nF @ 30V
Input	Standard
NTC Thermistor	No
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-PAK (3 + 4)
Supplier Device Package	INT-A-PAK
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-GT100DA120U	Vishay Semiconductor Diodes Division	IGBT 1200V 258A 893W SOT-227	Details
VS-GT100DA120UF	Vishay Semiconductor Diodes Division	OUTPUT SW MODULES - SOT-227 IG	Details
VS-GT100DA60U	Vishay Semiconductor Diodes Division	IGBT 600V 184A 577W SOT-227	Details
VS-GT100LA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 134A 463W SOT-227	Details
VS-GT100NA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 134A 463W SOT-227	Details
VS-GT100TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 180A 652W INT-A-PAK	Details
VS-GT100TP60N	Vishay Semiconductor Diodes Division	IGBT 600V 160A 417W INT-A-PAK	Details
VS-GT105LA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 105A LS CHOP SOT-227	Details
VS-GT105NA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 105A HS CHOP SOT-227	Details
VS-GT120DA65U	Vishay Semiconductor Diodes Division	OUTPUT SW MODULES - SOT-227 IG	Details