VS-GB90DA60U - Vishay Semiconductor Diodes Division

Part Number	VS-GB90DA60U
Part Status	Active
IGBT Type	NPT
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	147A
Power - Max	625W
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 100A
Current - Collector Cutoff (Max)	100µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4
Supplier Device Package	SOT-227
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-GA100NA60UP	Vishay Semiconductor Diodes Division	IGBT 600V 100A 250W SOT-227	Details
VS-GA100TS120UPBF	Vishay Semiconductor Diodes Division	IGBT 1200V 182A 520W INT-A-PAK	Details
VS-GA100TS60SF	Vishay Semiconductor Diodes Division	IGBT 600V 220A 780W	Details
VS-GA100TS60SFPBF	Vishay Semiconductor Diodes Division	IGBT 600V 220A 780W INT-A-PAK	Details
VS-GA200HS60S1	Vishay Semiconductor Diodes Division	IGBT 600V 480A 830W	Details
VS-GA200HS60S1PBF	Vishay Semiconductor Diodes Division	IGBT 600V 480A 830W INT-A-PAK	Details
VS-GA200SA60SP	Vishay Semiconductor Diodes Division	MODULE IGBT SOT-227	Details
VS-GA200SA60UP	Vishay Semiconductor Diodes Division	IGBT 600V 200A 500W SOT-227	Details
VS-GA200TH60S	Vishay Semiconductor Diodes Division	IGBT 600V 260A 1042W INT-A-PAK	Details
VS-GA250SA60S	Vishay Semiconductor Diodes Division	IGBT 600V 400A SOT227	Details