VS-GB50YF120N - Vishay Semiconductor Diodes Division

Part Number	VS-GB50YF120N
Part Status	Active
IGBT Type	-
Configuration	-
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	66A
Power - Max	330W
Vce(on) (Max) @ Vge, Ic	4.5V @ 15V, 75A
Current - Collector Cutoff (Max)	250µA
Input Capacitance (Cies) @ Vce	-
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	ECONO2 4PACK
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
VS-GB05XP120KTPBF	Vishay Semiconductor Diodes Division	MODULE MTP SWITCH	Details
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VS-GB100LH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100LP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 658W INT-A-PAK	Details
VS-GB100NH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 833W INT-A-PAK	Details
VS-GB100TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 1136W INT-A-PAK	Details
VS-GB100TP120N	Vishay Semiconductor Diodes Division	IGBT 1200V 200A 650W INT-A-PAK	Details
VS-GB100TP120U	Vishay Semiconductor Diodes Division	IGBT 1200V 150A 735W INT-A-PAK	Details
VS-GB100TS60NPBF	Vishay Semiconductor Diodes Division	IGBT 600V 108A 390W INT-A-PAK	Details