SUD19N20-90-E3 - Vishay Siliconix

Part Number	SUD19N20-90-E3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs	90 mOhm @ 5A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SUD19N20-90	VISHAY	SUD19N20-90 VISHAY DPAK(T.. New Original Stocks	Details
SUD19N20-90-E3	Vishay Siliconix	MOSFET N-CH 200V 19A DPAK	Details
SUD19N20-90-T4-E3	Vishay Siliconix	MOSFET N-CH 200V 19A TO252	Details
SUD19N20-90_08	VISHAY	N-Channel 200-V (D-S) 175 ∑C MOSFET	Details
SUD19P06-60	VISHAY	P-Channel 60-V (D-S) MOSFET	Details
SUD19P06-60-E3	Vishay Siliconix	MOSFET P-CH 60V 18.3A TO252	Details
SUD19P06-60-GE3	Vishay Siliconix	MOSFET P-CH 60V 18.3A TO-252	Details
SUD19P06-60L-E3	Vishay Siliconix	MOSFET P-CH 60V 19A TO252	Details