SQJ465EP-T1_GE3 - Vishay Siliconix

Part Number	SQJ465EP-T1_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1140pF @ 30V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Rds On (Max) @ Id, Vgs	85 mOhm @ 3.5A, 10V, 1.17 mOhm @ 20A, 10V
Operating Temperature	-55°C ~ 175°C (TA)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQJ460AEP-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 32A PPAK SO-8	Details
SQJ461EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 30A	Details
SQJ463EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 30A	Details
SQJ464EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 32A POWERPAKSO-8	Details
SQJ465EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 8A POWERPAK SO-8	Details
SQJ469EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 80V 32A PPAK SO-8	Details