SQJ431EP-T1_GE3

SQJ431EP-T1_GE3 - Vishay Siliconix

Part Number
SQJ431EP-T1_GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CHAN 200V SO8L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SQJ431EP-T1_GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
7500 pcs
Reference Price
USD 0.8613/pcs
Our Price
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SQJ431EP-T1_GE3 Detailed Description

Part Number SQJ431EP-T1_GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4355pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Rds On (Max) @ Id, Vgs 213 mOhm @ 1A, 4V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Weight -
Country of Origin -

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