SQJ431AEP-T1_GE3 - Vishay Siliconix

Part Number	SQJ431AEP-T1_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	305 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 25V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	8-PowerTDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQJ431AEP-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 200V	Details
SQJ431EP-T1_GE3	Vishay Siliconix	MOSFET P-CHAN 200V SO8L	Details
SQJ431EPT1-GE3	VISAHY	SQJ431EPT1-GE3 VISAHY SMD New Original Stocks	Details