SQD23N06-31L_GE3

SQD23N06-31L_GE3 - Vishay Siliconix

Part Number
SQD23N06-31L_GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 60V 23A TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SQD23N06-31L_GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
33902 pcs
Reference Price
USD 0.7484/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SQD23N06-31L_GE3

SQD23N06-31L_GE3 Detailed Description

Part Number SQD23N06-31L_GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 845pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 37W (Tc)
Rds On (Max) @ Id, Vgs 31 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

RELATED PRODUCTS FOR SQD23N06-31L_GE3