SQ2309ES-T1_GE3 Detailed Description
Part Number |
SQ2309ES-T1_GE3 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
1.7A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
8.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
265pF @ 25V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
2W (Tc) |
Rds On (Max) @ Id, Vgs |
336 mOhm @ 3.8A, 10V |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-236 (SOT-23) |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Weight |
- |
Country of Origin |
- |
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