SIRA50ADP-T1-RE3 - Vishay Siliconix

Part Number	SIRA50ADP-T1-RE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	54.8A (Ta), 219A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.04 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	7300pF @ 20V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	SIRA50ADP-T1-RE3	Vishay Siliconix	MOSFET N-CHAN 40V PPAK SO-8	Details
	SIRA50DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 40V PWRPAK SO-8	Details