SIJA52ADP-T1-GE3 - Vishay Siliconix

Part Number	SIJA52ADP-T1-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	41.6A (Ta), 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.63 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 20V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 48W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	SIJA52ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V PPAK SO-8L	Details
	SIJA52DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8L	Details