SIHH26N60EF-T1-GE3

SIHH26N60EF-T1-GE3 - Vishay Siliconix

Part Number
SIHH26N60EF-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CHAN 600V 24A POWERPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIHH26N60EF-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
6643 pcs
Reference Price
USD 3.8324/pcs
Our Price
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SIHH26N60EF-T1-GE3 Detailed Description

Part Number SIHH26N60EF-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2744pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 202W (Tc)
Rds On (Max) @ Id, Vgs 141 mOhm @ 13A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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