SIHFR1N60ATR-GE3

SIHFR1N60ATR-GE3 - Vishay Siliconix

Part Number
SIHFR1N60ATR-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 600V 1.4A TO252AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIHFR1N60ATR-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
460842 pcs
Reference Price
USD 0.35728/pcs
Our Price
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SIHFR1N60ATR-GE3 Detailed Description

Part Number SIHFR1N60ATR-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7 Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 229pF @ 25V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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