SIHFR1N60ATR-GE3 Detailed Description
Part Number |
SIHFR1N60ATR-GE3 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600V |
Current - Continuous Drain (Id) @ 25°C |
1.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
7 Ohm @ 840mA, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
14nC @ 10V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
229pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
36W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D-PAK (TO-252AA) |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Weight |
- |
Country of Origin |
- |
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