SIHF22N60E-E3 - Vishay Siliconix

Part Number	SIHF22N60E-E3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	180 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86nC @ 10V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1920pF @ 100V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIHF22N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 21A TO220	Details
SIHF22N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 21A TO220	Details
SIHF22N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 22A TO-220FK	Details
SIHF23N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 23A TO-220	Details
SIHF28N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 28A FULLPAK220	Details