SIHF18N50C-E3 - Vishay Siliconix

Part Number	SIHF18N50C-E3
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	76nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2942pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	38W (Tc)
Rds On (Max) @ Id, Vgs	270 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIHF10N40D-E3	Vishay Siliconix	MOSFET N-CH 400V 10A TO-220 FPAK	Details
SIHF12N50C-E3	Vishay Siliconix	MOSFET N-CH 500V 12A TO-220	Details
SIHF12N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 12A TO220 FULLP	Details
SIHF12N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 12A TO220 FULLP	Details
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SIHF15N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 15A TO220 FULLP	Details
SIHF15N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 15A TO220 FULLP	Details
SIHF15N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 15A TO220AB	Details
SIHF16N50C-E3	Vishay Siliconix	MOSFET N-CH 500V 16A TO-220	Details
SIHF18N50C-E3	Vishay Siliconix	MOSFET N-CH 500V 18A TO220	Details