| Part Number | SIA436DJ-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25.2nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1508pF @ 4V |
| Vgs (Max) | ±5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4 mOhm @ 15.7A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SC-70-6 Single |
| Package / Case | PowerPAK® SC-70-6 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SIA430DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 12A SC70-6 | Details |
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SIA430DJ-T4-GE3 | Vishay Siliconix | MOSFET N-CH 20V SC-70-6 | Details |
|
SIA430DJT-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 12A SC70-6 | Details |
|
SIA430DJT-T4-GE3 | Vishay Siliconix | MOSFET N-CH 20V 12A SC-70-6 | Details |
|
SIA431DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A PPAK SC70-6 | Details |
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SIA432DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A SC70-6 | Details |
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SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 12A SC-70-6 | Details |
|
SIA436DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 12A SC70-6L | Details |
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SIA437DJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 29.7A SC70-6 | Details |
|
SIA438EDJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 6A PPAK SC70-6L | Details |
